Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling
Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stre...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/6/1247 |
| _version_ | 1797563985402265600 |
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| author | Rajkiran Tholapi Manon Gallard Nelly Burle Christophe Guichet Stephanie Escoubas Magali Putero Cristian Mocuta Marie-Ingrid Richard Rebecca Chahine Chiara Sabbione Mathieu Bernard Leila Fellouh Pierre Noé Olivier Thomas |
| author_facet | Rajkiran Tholapi Manon Gallard Nelly Burle Christophe Guichet Stephanie Escoubas Magali Putero Cristian Mocuta Marie-Ingrid Richard Rebecca Chahine Chiara Sabbione Mathieu Bernard Leila Fellouh Pierre Noé Olivier Thomas |
| author_sort | Rajkiran Tholapi |
| collection | DOAJ |
| description | Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stress evolution during crystallization in thin GeTe films capped with SiO<i><sub>x</sub></i>, using optical curvature measurements. A 150 MPa tensile stress buildup is measured when the 100 nm thick film crystallizes. Stress evolution is a result of viscosity increase with time and a tentative model is proposed that renders qualitatively the observed features. |
| first_indexed | 2024-03-10T18:50:57Z |
| format | Article |
| id | doaj.art-084acc192165421a9c9bd9245e7c3f9c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T18:50:57Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-084acc192165421a9c9bd9245e7c3f9c2023-11-20T05:05:24ZengMDPI AGNanomaterials2079-49912020-06-01106124710.3390/nano10061247Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and ModellingRajkiran Tholapi0Manon Gallard1Nelly Burle2Christophe Guichet3Stephanie Escoubas4Magali Putero5Cristian Mocuta6Marie-Ingrid Richard7Rebecca Chahine8Chiara Sabbione9Mathieu Bernard10Leila Fellouh11Pierre Noé12Olivier Thomas13Aix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceSynchrotron SOLEIL, l’Orme des Merisiers, Saint-Aubin–BP 48, 91192 Gif-sur-Yvette, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FranceUniversity Grenoble Alpes, CEA (Commissariat à l’Energie Atomique et aux Énergies Alternatives), LETI (Laboratoire d’Electronique et des Technologies de l’Information), F-38000 Grenoble, FranceUniversity Grenoble Alpes, CEA (Commissariat à l’Energie Atomique et aux Énergies Alternatives), LETI (Laboratoire d’Electronique et des Technologies de l’Information), F-38000 Grenoble, FranceUniversity Grenoble Alpes, CEA (Commissariat à l’Energie Atomique et aux Énergies Alternatives), LETI (Laboratoire d’Electronique et des Technologies de l’Information), F-38000 Grenoble, FranceUniversity Grenoble Alpes, CEA (Commissariat à l’Energie Atomique et aux Énergies Alternatives), LETI (Laboratoire d’Electronique et des Technologies de l’Information), F-38000 Grenoble, FranceUniversity Grenoble Alpes, CEA (Commissariat à l’Energie Atomique et aux Énergies Alternatives), LETI (Laboratoire d’Electronique et des Technologies de l’Information), F-38000 Grenoble, FranceAix Marseille Univ, U. Toulon, CNRS, IM2NP (Institut Matériaux Microélectronique et Nanosciences de Provence), Campus St-Jérôme, 13397 Marseille CEDEX 20, FrancePhase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stress evolution during crystallization in thin GeTe films capped with SiO<i><sub>x</sub></i>, using optical curvature measurements. A 150 MPa tensile stress buildup is measured when the 100 nm thick film crystallizes. Stress evolution is a result of viscosity increase with time and a tentative model is proposed that renders qualitatively the observed features.https://www.mdpi.com/2079-4991/10/6/1247phase-change materialswafer curvatureGeTestresscrystallization |
| spellingShingle | Rajkiran Tholapi Manon Gallard Nelly Burle Christophe Guichet Stephanie Escoubas Magali Putero Cristian Mocuta Marie-Ingrid Richard Rebecca Chahine Chiara Sabbione Mathieu Bernard Leila Fellouh Pierre Noé Olivier Thomas Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling Nanomaterials phase-change materials wafer curvature GeTe stress crystallization |
| title | Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling |
| title_full | Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling |
| title_fullStr | Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling |
| title_full_unstemmed | Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling |
| title_short | Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling |
| title_sort | stress buildup upon crystallization of gete thin films curvature measurements and modelling |
| topic | phase-change materials wafer curvature GeTe stress crystallization |
| url | https://www.mdpi.com/2079-4991/10/6/1247 |
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