Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adju...

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Bibliographic Details
Main Authors: Hassan Abboudi, Haddou EL Ghazi, Redouane En-nadir, Mohamed A. Basyooni-M. Kabatas, Anouar Jorio, Izeddine Zorkani
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
IBSC
III-nitrides
efficiency
semi-graded potential
built-in field
thickness
Online Access:https://www.mdpi.com/2079-4991/14/1/104

Internet

https://www.mdpi.com/2079-4991/14/1/104

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