Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment
We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2024-01-01
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Series: | JPhys Materials |
Subjects: | |
Online Access: | https://doi.org/10.1088/2515-7639/ad1c02 |