Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment

We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and...

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Bibliographic Details
Main Authors: Yuxuan Zhang, Mingyuan Liu, Hyo-Young Yeom, Byung-Hyuk Jun, Jinwook Baek, Kwangsoo No, Han-Wook Song, Sunghwan Lee
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:JPhys Materials
Subjects:
Online Access:https://doi.org/10.1088/2515-7639/ad1c02