Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment
We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | JPhys Materials |
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| Online Access: | https://doi.org/10.1088/2515-7639/ad1c02 |
| _version_ | 1797338658697641984 |
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| author | Yuxuan Zhang Mingyuan Liu Hyo-Young Yeom Byung-Hyuk Jun Jinwook Baek Kwangsoo No Han-Wook Song Sunghwan Lee |
| author_facet | Yuxuan Zhang Mingyuan Liu Hyo-Young Yeom Byung-Hyuk Jun Jinwook Baek Kwangsoo No Han-Wook Song Sunghwan Lee |
| author_sort | Yuxuan Zhang |
| collection | DOAJ |
| description | We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and an increase in carrier density. In addition, regardless of initial values, nearly the same work function is obtained for all the plasma-treated oCVD PT films as high as ∼5.25 eV, suggesting the pseudo-equilibrium state is reached in the oCVD PT from the plasma treatment. This increase in carrier density after plasma treatment is attributed to the activation of initially not-activated dopant species (i.e. neutrally charged Br), which is analogous to the release of trapped charge carriers to the valence band of the oCVD PT. The enhancement of electrical properties of oCVD PT is directly related to the improvement of the thin film transistor performance such as drain current on/off ratio, ∼10 ^3 and field effect mobility, 2.25 × 10 ^−2 cm ^2 Vs ^−1 , compared to untreated counterparts of 10 ^2 and 0.09 × 10 ^−2 cm Vs ^−1 , respectively. |
| first_indexed | 2024-03-08T09:34:29Z |
| format | Article |
| id | doaj.art-08592b3702824800bed83ab835357225 |
| institution | Directory Open Access Journal |
| issn | 2515-7639 |
| language | English |
| last_indexed | 2024-03-08T09:34:29Z |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Materials |
| spelling | doaj.art-08592b3702824800bed83ab8353572252024-01-30T09:53:06ZengIOP PublishingJPhys Materials2515-76392024-01-017101501110.1088/2515-7639/ad1c02Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatmentYuxuan Zhang0Mingyuan Liu1Hyo-Young Yeom2Byung-Hyuk Jun3https://orcid.org/0000-0001-8566-3548Jinwook Baek4Kwangsoo No5Han-Wook Song6Sunghwan Lee7https://orcid.org/0000-0001-6688-8995School of Engineering Technology, Purdue University , West Lafayette, IN 47907, United States of AmericaSchool of Engineering Technology, Purdue University , West Lafayette, IN 47907, United States of AmericaSchool of Liberal Studies, Cheongju University , Cheongju 28503, Republic of KoreaMaterials Safety Technology Research Division, Korea Atomic Energy Research Institute (KAERI) , Daejeon 34057, Republic of KoreaSchool of Engineering Technology, Purdue University , West Lafayette, IN 47907, United States of AmericaDepartment of Materials Science and Engineering, KAIST , Daejeon 34141, Republic of KoreaCenter for Mass and Related Quantities, Korea Research Institute of Standard and Science , Daejeon 34113, Republic of KoreaSchool of Engineering Technology, Purdue University , West Lafayette, IN 47907, United States of AmericaWe report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and an increase in carrier density. In addition, regardless of initial values, nearly the same work function is obtained for all the plasma-treated oCVD PT films as high as ∼5.25 eV, suggesting the pseudo-equilibrium state is reached in the oCVD PT from the plasma treatment. This increase in carrier density after plasma treatment is attributed to the activation of initially not-activated dopant species (i.e. neutrally charged Br), which is analogous to the release of trapped charge carriers to the valence band of the oCVD PT. The enhancement of electrical properties of oCVD PT is directly related to the improvement of the thin film transistor performance such as drain current on/off ratio, ∼10 ^3 and field effect mobility, 2.25 × 10 ^−2 cm ^2 Vs ^−1 , compared to untreated counterparts of 10 ^2 and 0.09 × 10 ^−2 cm Vs ^−1 , respectively.https://doi.org/10.1088/2515-7639/ad1c02unsubstituted polythiopheneoxidative chemical vapor depositionoCVDconducting polymerwork functionpost-treatment |
| spellingShingle | Yuxuan Zhang Mingyuan Liu Hyo-Young Yeom Byung-Hyuk Jun Jinwook Baek Kwangsoo No Han-Wook Song Sunghwan Lee Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment JPhys Materials unsubstituted polythiophene oxidative chemical vapor deposition oCVD conducting polymer work function post-treatment |
| title | Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| title_full | Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| title_fullStr | Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| title_full_unstemmed | Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| title_short | Enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| title_sort | enhanced doping and structure relaxation of unsubstituted polythiophene through oxidative chemical vapor deposition and mild plasma treatment |
| topic | unsubstituted polythiophene oxidative chemical vapor deposition oCVD conducting polymer work function post-treatment |
| url | https://doi.org/10.1088/2515-7639/ad1c02 |
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