Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2-D material-based TFETs can have tight ga...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Online Access: | https://ieeexplore.ieee.org/document/7085931/ |