Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
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MDPI AG
2020-08-01
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| Շարք: | Micromachines |
| Խորագրեր: | |
| Առցանց հասանելիություն: | https://www.mdpi.com/2072-666X/11/9/822 |