Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT. The thermal resistance, static characteristics and dynamic characteristics of SiC IGBT a...

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Bibliographic Details
Main Authors: Lubin Han, Lin Liang, Yijian Wang, Xinling Tang, Song Bai
Format: Article
Language:English
Published: Elsevier 2022-10-01
Series:Power Electronic Devices and Components
Subjects:
Silicon carbide
Insulated gate bipolar transistor (IGBT)
Metal oxide semiconductor field effect transistor (MOSFET)
Switching frequency limit
Electromagnetic interfere
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370422000165

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http://www.sciencedirect.com/science/article/pii/S2772370422000165

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