Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device

Volatile Resistive Switching Characteristics of Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN Short-Term Memory Device

In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO<sub>2</sub>/TaO<i><sub>x</sub></i>/TiN resistive memory device for a neuromorphic system. First, we verify the thickness and elemental characterization of the device stack...

Full description

Bibliographic Details
Main Authors: Hojeong Ryu, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Metals
Subjects:
resistive switching
synaptic device
short-term memory
threshold switching
Online Access:https://www.mdpi.com/2075-4701/11/8/1207

Internet

https://www.mdpi.com/2075-4701/11/8/1207

Similar Items