Ultra-wide bandgap semiconductor Ga2O3 power diodes

Ultra-wide bandgap semiconductor Ga2O3 power diodes

The simultaneous achievement of high breakdown voltage and low resistance is a contradictory point because it would require high and low doping simultaneously. Here, Zhou et al. achieve a power figure-of-merit of 13.2 GW/cm2 through hole injection and conductivity modulation effect.

Bibliographic Details
Main Authors: Jincheng Zhang, Pengfei Dong, Kui Dang, Yanni Zhang, Qinglong Yan, Hu Xiang, Jie Su, Zhihong Liu, Mengwei Si, Jiacheng Gao, Moufu Kong, Hong Zhou, Yue Hao
Format: Article
Language:English
Published: Nature Portfolio 2022-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-31664-y

Internet

https://doi.org/10.1038/s41467-022-31664-y

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