On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
In this work, a unified numerical model is used to determine the melting thresholds and to investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition ov...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/13/6/3818 |