Performance optimization of high-K pocket hetero-dielectric TFET using improved geometry design

Performance optimization of high-K pocket hetero-dielectric TFET using improved geometry design

This study explores the optimization of a hetero-dielectric tunnel field-effect transistor (HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket in a portion of the source-side gate insulator, a local minimum in the conduction band edge is induced at the source-cha...

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Bibliographic Details
Main Authors:	Abdelrahman Elshamy, Ahmed Shaker, Yasmine Elogail, Marwa S. Salem, Mona El Sabbagh
Format:	Article
Language:	English
Published:	Elsevier 2024-03-01
Series:	Alexandria Engineering Journal
Subjects:	Hetero-dielectric TFET High-K pocket ON/OFF current ratio Subthreshold swing Cutoff frequency Inverter circuit
Online Access:	http://www.sciencedirect.com/science/article/pii/S1110016824001169

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