Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe
Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
|
| Series: | Optics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3269/4/2/19 |