Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe
Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (...
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MDPI AG
2023-03-01
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| Series: | Optics |
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| Online Access: | https://www.mdpi.com/2673-3269/4/2/19 |
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| author | Daniel T. Cassidy Jean-Pierre Landesman Merwan Mokhtari Philippe Pagnod-Rossiaux Marc Fouchier Christian Monachon |
| author_facet | Daniel T. Cassidy Jean-Pierre Landesman Merwan Mokhtari Philippe Pagnod-Rossiaux Marc Fouchier Christian Monachon |
| author_sort | Daniel T. Cassidy |
| collection | DOAJ |
| description | Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes. |
| first_indexed | 2024-03-11T02:03:51Z |
| format | Article |
| id | doaj.art-09117771d3e64e9baaf61f15157b5cb1 |
| institution | Directory Open Access Journal |
| issn | 2673-3269 |
| language | English |
| last_indexed | 2024-03-11T02:03:51Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
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| series | Optics |
| spelling | doaj.art-09117771d3e64e9baaf61f15157b5cb12023-11-18T11:58:22ZengMDPI AGOptics2673-32692023-03-014227228710.3390/opt4020019Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN StripeDaniel T. Cassidy0Jean-Pierre Landesman1Merwan Mokhtari2Philippe Pagnod-Rossiaux3Marc Fouchier4Christian Monachon5Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, CanadaInstitut FOTON–UMR 6082, Université de Rennes, INSA Rennes, CNRS, 35000 Rennes, France3SP Technologies, Route de Villejust, CEDEX, 91625 Nozay, France3SP Technologies, Route de Villejust, CEDEX, 91625 Nozay, FranceAttolight AG, 1015 Lausanne, SwitzerlandAttolight AG, 1015 Lausanne, SwitzerlandMeasurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes.https://www.mdpi.com/2673-3269/4/2/19degree of polarization (DOP)cathodoluminescence (CL)GaAsSiN stripestressstrain |
| spellingShingle | Daniel T. Cassidy Jean-Pierre Landesman Merwan Mokhtari Philippe Pagnod-Rossiaux Marc Fouchier Christian Monachon Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe Optics degree of polarization (DOP) cathodoluminescence (CL) GaAs SiN stripe stress strain |
| title | Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe |
| title_full | Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe |
| title_fullStr | Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe |
| title_full_unstemmed | Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe |
| title_short | Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe |
| title_sort | degree of polarization of cathodoluminescence from a gaas facet in the vicinity of an sin stripe |
| topic | degree of polarization (DOP) cathodoluminescence (CL) GaAs SiN stripe stress strain |
| url | https://www.mdpi.com/2673-3269/4/2/19 |
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