Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography
Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists fea...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-10-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300420 |
| _version_ | 1797665993311387648 |
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| author | Ashwanth Subramanian Nikhil Tiwale Won‐Il Lee Kim Kisslinger Ming Lu Aaron Stein Jiyoung Kim Chang‐Yong Nam |
| author_facet | Ashwanth Subramanian Nikhil Tiwale Won‐Il Lee Kim Kisslinger Ming Lu Aaron Stein Jiyoung Kim Chang‐Yong Nam |
| author_sort | Ashwanth Subramanian |
| collection | DOAJ |
| description | Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InOx), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm−2 and 300 µC cm−2, respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InOx hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning. |
| first_indexed | 2024-03-11T19:52:56Z |
| format | Article |
| id | doaj.art-0915a9a7cf9a493babfca82640cbb06a |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-11T19:52:56Z |
| publishDate | 2023-10-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-0915a9a7cf9a493babfca82640cbb06a2023-10-05T01:07:57ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-10-011028n/an/a10.1002/admi.202300420Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV LithographyAshwanth Subramanian0Nikhil Tiwale1Won‐Il Lee2Kim Kisslinger3Ming Lu4Aaron Stein5Jiyoung Kim6Chang‐Yong Nam7Department of Materials Science and Chemical Engineering Stony Brook University Stony Brook NY 11794 USACenter for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USADepartment of Materials Science and Chemical Engineering Stony Brook University Stony Brook NY 11794 USACenter for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USACenter for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USACenter for Functional Nanomaterials Brookhaven National Laboratory Upton NY 11973 USADepartment of Materials Science and Engineering University of Texas at Dallas Richardson TX 75080 USADepartment of Materials Science and Chemical Engineering Stony Brook University Stony Brook NY 11794 USAAbstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InOx), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm−2 and 300 µC cm−2, respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InOx hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.https://doi.org/10.1002/admi.202300420electron beam lithographyextreme ultraviolet lithographyorganic–inorganic hybridphotoresistvapor‐phase infiltration |
| spellingShingle | Ashwanth Subramanian Nikhil Tiwale Won‐Il Lee Kim Kisslinger Ming Lu Aaron Stein Jiyoung Kim Chang‐Yong Nam Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography Advanced Materials Interfaces electron beam lithography extreme ultraviolet lithography organic–inorganic hybrid photoresist vapor‐phase infiltration |
| title | Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography |
| title_full | Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography |
| title_fullStr | Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography |
| title_full_unstemmed | Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography |
| title_short | Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography |
| title_sort | vapor phase infiltrated organic inorganic positive tone hybrid photoresist for extreme uv lithography |
| topic | electron beam lithography extreme ultraviolet lithography organic–inorganic hybrid photoresist vapor‐phase infiltration |
| url | https://doi.org/10.1002/admi.202300420 |
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