Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage
A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET) effect and breakdown characteristics. The device features an AlGaN back barrier layer and a buried P-GaN island in the back barrier layer (BP-HEMT). First, the P-GaN island not only modulates the electric field distributi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-06-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217924000236 |