Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allo...

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Bibliographic Details
Main Authors: Davide F. Grossi, Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Nanomaterials
Subjects:
diluted magnetic semiconductors
diffusion
ZnSe/GaAs interface
Mn impurities
dopants
segregation
Online Access:https://www.mdpi.com/2079-4991/10/7/1315

Internet

https://www.mdpi.com/2079-4991/10/7/1315

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