Influence of Y Doping on WO<sub>3</sub> Membranes Applied in Electrolyte-Insulator-Semiconductor Structures

Influence of Y Doping on WO<sub>3</sub> Membranes Applied in Electrolyte-Insulator-Semiconductor Structures

In this paper, tungsten oxide (WO<sub>3</sub>) is deposited on a silicon substrate applied in electrolyte-insulator-semiconductor structures for pH sensing devices. To boost the sensing performance, yttrium (Y) is doped into WO<sub>3</sub> membranes, and annealing is incorpor...

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Bibliographic Details
Main Authors: Chyuan-Haur Kao, Yu-Ching Liao, Chi-Chih Chuang, Yi-Hsuan Huang, Chang-Hsueh Lee, Shih-Ming Chen, Ming-Ling Lee, Hsiang Chen
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Membranes
Subjects:
tungsten trioxide
yttrium doping
annealing
electrolyte-insulator-semiconductor
membranes
defects
Online Access:https://www.mdpi.com/2077-0375/12/3/328

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https://www.mdpi.com/2077-0375/12/3/328

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