Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions
Abstract We study a low voltage short pulse operating multilevel memory based on van der Waals heterostack (HS) n-MoSe2/n-MoS2 channel field-effect transistors (FETs). Our HS memory FET exploited the gate voltage (VGS)-induced trapping/de-trapping phenomena for Program/Erase functioning, which was m...
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2022-03-01
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Series: | npj 2D Materials and Applications |
Online Access: | https://doi.org/10.1038/s41699-022-00295-8 |