Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit

Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit

In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can r...

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Bibliographic Details
Main Authors: Ruibo Chen, Hao Wei, Hongxia Liu, Zhiwei Liu, Yaolin Chen
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
on-chip ESD
SCR
trigger voltage
overshoot
Online Access:https://www.mdpi.com/2079-4991/12/23/4250

Internet

https://www.mdpi.com/2079-4991/12/23/4250

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