Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can r...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/23/4250 |
| _version_ | 1797462494493540352 |
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| author | Ruibo Chen Hao Wei Hongxia Liu Zhiwei Liu Yaolin Chen |
| author_facet | Ruibo Chen Hao Wei Hongxia Liu Zhiwei Liu Yaolin Chen |
| author_sort | Ruibo Chen |
| collection | DOAJ |
| description | In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can realize ~2 V lower trigger voltage. Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications. |
| first_indexed | 2024-03-09T17:37:22Z |
| format | Article |
| id | doaj.art-0958b2dfbd054a39957e471065786c76 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T17:37:22Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0958b2dfbd054a39957e471065786c762023-11-24T11:47:53ZengMDPI AGNanomaterials2079-49912022-11-011223425010.3390/nano12234250Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated CircuitRuibo Chen0Hao Wei1Hongxia Liu2Zhiwei Liu3Yaolin Chen4Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610056, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm CMOS process. By adding an external NMOSs-chain triggering component to the conventional LVTSCR, the proposed ULVTSCR can realize ~2 V lower trigger voltage. Meanwhile, the trigger voltage of the ULVTSCR is adjustable with the number of its incorporated NMOS transistors. Compared with the existing Diodes-chain Triggered SCR (DTSCR) scheme, the NMOSs-chain triggered ULVTSCR possesses a 25% lowered overshoot voltage in the same area consumption, and thus it is more suitable for 2.5 V circuits ESD protections considering the CDM protection applications.https://www.mdpi.com/2079-4991/12/23/4250on-chip ESDSCRtrigger voltageovershoot |
| spellingShingle | Ruibo Chen Hao Wei Hongxia Liu Zhiwei Liu Yaolin Chen Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit Nanomaterials on-chip ESD SCR trigger voltage overshoot |
| title | Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit |
| title_full | Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit |
| title_fullStr | Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit |
| title_full_unstemmed | Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit |
| title_short | Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit |
| title_sort | ultra low voltage triggered silicon controlled rectifier esd protection device for 2 5 v nano integrated circuit |
| topic | on-chip ESD SCR trigger voltage overshoot |
| url | https://www.mdpi.com/2079-4991/12/23/4250 |
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