Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3
Abstract 2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric‐field control by latera...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202000068 |