Leakage Current Behavior in HfO<sub>2</sub>/SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Dielectric on 4H-SiC Substrate

Leakage Current Behavior in HfO<sub>2</sub>/SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Dielectric on 4H-SiC Substrate

In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications. C-V measurements reveal that the HfO2/SiO2/Al2O3/4H-SiC structure exhibits lower interface state density (Dit) and a re...

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Bibliographic Details
Main Authors: Hao Huang, Ying Wang, Ke-Han Chen, Xin-Xing Fei
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High-k dielectric
4H-SiC
atomic force microscopy
transmission electron microscopy
dielectric breakdown field
Online Access:https://ieeexplore.ieee.org/document/10185548/

Internet

https://ieeexplore.ieee.org/document/10185548/

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