Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2

Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2

Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impuri...

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Bibliographic Details
Main Authors: Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng He, Sarah C. Mason, Xiaochuan Xu, Jung-Fu Lin, Deji Akinwande, Sanjay K. Banerjee, Yaguo Wang
Format: Article
Language:English
Published: Nature Portfolio 2017-06-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-017-0019-1

Internet

https://doi.org/10.1038/s41699-017-0019-1

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