Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2
Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impuri...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2017-06-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-017-0019-1 |
| _version_ | 1818997888991100928 |
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| author | Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang |
| author_facet | Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang |
| author_sort | Ke Chen |
| collection | DOAJ |
| description | Mid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impurities, most of which affect carrier mobility by inducing mid-gap states, i.e. within the bandgap. Now a team led by Yaguo Wang from the University of Texas elucidates the role of defects in samples grown by chemical vapor deposition. Femtosecond pump probe spectroscopy reveals that such defects are prone to capture (within few picoseconds) and then release (at slightly longer timescales of hundreds of picoseconds) electrons and holes. Such dynamics are intrinsic to samples grown with this particular method and possibly linked to the oxygen-associated impurities introduced during growth. This knowledge is relevant to engineering the properties of 2D materials for optoelectronics applications. |
| first_indexed | 2024-12-20T21:52:48Z |
| format | Article |
| id | doaj.art-09adb0b97a6b4fd4939c1d7669bef8ec |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-12-20T21:52:48Z |
| publishDate | 2017-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-09adb0b97a6b4fd4939c1d7669bef8ec2022-12-21T19:25:31ZengNature Portfolionpj 2D Materials and Applications2397-71322017-06-01111810.1038/s41699-017-0019-1Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2Ke Chen0Rudresh Ghosh1Xianghai Meng2Anupam Roy3Joon-Seok Kim4Feng He5Sarah C. Mason6Xiaochuan Xu7Jung-Fu Lin8Deji Akinwande9Sanjay K. Banerjee10Yaguo Wang11Department of Mechanical Engineering, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinDepartment of Mechanical Engineering, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinDepartment of Mechanical Engineering, The University of Texas at AustinDepartment of Mechanical Engineering, The University of Texas at AustinOmega Optics, Inc.Texas Materials Institute, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinDepartment of Mechanical Engineering, The University of Texas at AustinMid-gap defects: Carriers in a trap The temporal dynamics of photo-generated electrons and holes in MoSe2 trapped by defects are revealed. While transitional metal dichalcogenides have significant potential for optoelectronic applications, samples tend to contain defects such as vacancies and impurities, most of which affect carrier mobility by inducing mid-gap states, i.e. within the bandgap. Now a team led by Yaguo Wang from the University of Texas elucidates the role of defects in samples grown by chemical vapor deposition. Femtosecond pump probe spectroscopy reveals that such defects are prone to capture (within few picoseconds) and then release (at slightly longer timescales of hundreds of picoseconds) electrons and holes. Such dynamics are intrinsic to samples grown with this particular method and possibly linked to the oxygen-associated impurities introduced during growth. This knowledge is relevant to engineering the properties of 2D materials for optoelectronics applications.https://doi.org/10.1038/s41699-017-0019-1 |
| spellingShingle | Ke Chen Rudresh Ghosh Xianghai Meng Anupam Roy Joon-Seok Kim Feng He Sarah C. Mason Xiaochuan Xu Jung-Fu Lin Deji Akinwande Sanjay K. Banerjee Yaguo Wang Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 npj 2D Materials and Applications |
| title | Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 |
| title_full | Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 |
| title_fullStr | Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 |
| title_full_unstemmed | Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 |
| title_short | Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 |
| title_sort | experimental evidence of exciton capture by mid gap defects in cvd grown monolayer mose2 |
| url | https://doi.org/10.1038/s41699-017-0019-1 |
| work_keys_str_mv | AT kechen experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT rudreshghosh experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT xianghaimeng experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT anupamroy experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT joonseokkim experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT fenghe experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT sarahcmason experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT xiaochuanxu experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT jungfulin experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT dejiakinwande experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT sanjaykbanerjee experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 AT yaguowang experimentalevidenceofexcitoncapturebymidgapdefectsincvdgrownmonolayermose2 |