ITO Thin Films for Low-Resistance Gas Sensors

ITO Thin Films for Low-Resistance Gas Sensors

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility...

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Bibliographic Details
Main Authors: Aleksei V. Almaev, Viktor V. Kopyev, Vadim A. Novikov, Andrei V. Chikiryaka, Nikita N. Yakovlev, Abay B. Usseinov, Zhakyp T. Karipbayev, Abdirash T. Akilbekov, Zhanymgul K. Koishybayeva, Anatoli I. Popov
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
indium tin oxide
thin films
gas sensors
Online Access:https://www.mdpi.com/1996-1944/16/1/342

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https://www.mdpi.com/1996-1944/16/1/342

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