Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge. In this work, we comprehensively investigate the behav...

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Bibliographic Details
Main Authors: Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao
Format: Article
Language:English
Published: AIP Publishing LLC 2024-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0184042

Internet

http://dx.doi.org/10.1063/5.0184042

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