Fabrication and Characterization of a Self-Powered n-Bi<sub>2</sub>Se<sub>3</sub>/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

Fabrication and Characterization of a Self-Powered n-Bi<sub>2</sub>Se<sub>3</sub>/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

In the present study, vacuum evaporation method is used to deposit Bi<sub>2</sub>Se<sub>3</sub> film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its respo...

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Bibliographic Details
Main Authors: Xuan Wang, Yehua Tang, Wanping Wang, Hao Zhao, Yanling Song, Chaoyang Kang, Kefan Wang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Nanomaterials
Subjects:
topological insulator
Bi<sub>2</sub>Se<sub>3</sub>
silicon nanowires
photodetector
bulk heterojunction
Online Access:https://www.mdpi.com/2079-4991/12/11/1824

Internet

https://www.mdpi.com/2079-4991/12/11/1824

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