Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...

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Bibliographic Details
Main Authors: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/11/1296