Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/11/1296 |
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| author | Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin |
| author_facet | Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin |
| author_sort | Haitao Zhang |
| collection | DOAJ |
| description | This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices. |
| first_indexed | 2024-03-10T05:15:26Z |
| format | Article |
| id | doaj.art-0a7d44ee08d044a8bbe25bae27e14489 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T05:15:26Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-0a7d44ee08d044a8bbe25bae27e144892023-11-23T00:25:23ZengMDPI AGMicromachines2072-666X2021-10-011211129610.3390/mi12111296Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier DiodeHaitao Zhang0Xuanwu Kang1Yingkui Zheng2Hao Wu3Ke Wei4Xinyu Liu5Tianchun Ye6Zhi Jin7High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaThis work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices.https://www.mdpi.com/2072-666X/12/11/1296GaNSBDSchottky barrier diodesimulationcurrent collapseelectric field |
| spellingShingle | Haitao Zhang Xuanwu Kang Yingkui Zheng Hao Wu Ke Wei Xinyu Liu Tianchun Ye Zhi Jin Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode Micromachines GaN SBD Schottky barrier diode simulation current collapse electric field |
| title | Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode |
| title_full | Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode |
| title_fullStr | Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode |
| title_full_unstemmed | Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode |
| title_short | Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode |
| title_sort | investigation on dynamic characteristics of algan gan lateral schottky barrier diode |
| topic | GaN SBD Schottky barrier diode simulation current collapse electric field |
| url | https://www.mdpi.com/2072-666X/12/11/1296 |
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