Investigation of lasing in highly strained germanium at the crossover to direct band gap

Investigation of lasing in highly strained germanium at the crossover to direct band gap

Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where...

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Bibliographic Details
Main Authors: F. T. Armand Pilon, Y-M. Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Format: Article
Language:English
Published: American Physical Society 2022-07-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.4.033050

Internet

http://doi.org/10.1103/PhysRevResearch.4.033050

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