Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction
AlGaN/GaN Fin-shaped field-effect transistors (FinFETs) with nano-sized Fin width (<inline-formula> <tex-math notation="LaTeX">$\text{W}_{\mathrm {Fin}}$ </tex-math></inline-formula>) from 20 nm to 230 nm are characterized using low-frequency noise (LFN) measurement...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10029361/ |