Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence
The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily do...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2010-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2010/5-6_2010/pdf/15.zip |