Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS<sub>2</sub> Layer

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS<sub>2</sub> Layer

Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp<sup>2</sup>-bonded two-dimensional (2D) MoS<sub>2</sub> buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully...

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Bibliographic Details
Main Authors: Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
molybdenum disulfide
gallium nitride
van der Waals epitaxy
pulsed laser deposition
molecular beam epitaxy
Online Access:https://www.mdpi.com/2079-4991/11/6/1406

Internet

https://www.mdpi.com/2079-4991/11/6/1406

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