The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates
In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the...
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MDPI AG
2022-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/4/670 |
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| author | Ivan V. Nikolaev Pavel V. Geydt Nikolay G. Korobeishchikov Aleksandr V. Kapishnikov Vladimir A. Volodin Ivan A. Azarov Vladimir I. Strunin Evgeny Y. Gerasimov |
| author_facet | Ivan V. Nikolaev Pavel V. Geydt Nikolay G. Korobeishchikov Aleksandr V. Kapishnikov Vladimir A. Volodin Ivan A. Azarov Vladimir I. Strunin Evgeny Y. Gerasimov |
| author_sort | Ivan V. Nikolaev |
| collection | DOAJ |
| description | In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the <i>c</i> axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators. |
| first_indexed | 2024-03-09T21:18:29Z |
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| id | doaj.art-0acd618860834ea28ccb151eb70f6cdc |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:18:29Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0acd618860834ea28ccb151eb70f6cdc2023-11-23T21:26:13ZengMDPI AGNanomaterials2079-49912022-02-0112467010.3390/nano12040670The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si SubstratesIvan V. Nikolaev0Pavel V. Geydt1Nikolay G. Korobeishchikov2Aleksandr V. Kapishnikov3Vladimir A. Volodin4Ivan A. Azarov5Vladimir I. Strunin6Evgeny Y. Gerasimov7Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, RussiaLaboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, RussiaDepartment of Applied Physics, Novosibirsk State University, 630090 Novosibirsk, RussiaLaboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, RussiaLaboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, RussiaLaboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, RussiaDepartment of Experimental Physics and Radiophysics, Dostoevsky Omsk State University, 644077 Omsk, RussiaBoreskov Institute of Catalysis, Russian Academy of Sciences (Siberian Branch), 630090 Novosibirsk, RussiaIn this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the <i>c</i> axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.https://www.mdpi.com/2079-4991/12/4/670aluminum nitridethin filmsgas cluster ion beamsurface smoothingmaterial characterization |
| spellingShingle | Ivan V. Nikolaev Pavel V. Geydt Nikolay G. Korobeishchikov Aleksandr V. Kapishnikov Vladimir A. Volodin Ivan A. Azarov Vladimir I. Strunin Evgeny Y. Gerasimov The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates Nanomaterials aluminum nitride thin films gas cluster ion beam surface smoothing material characterization |
| title | The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates |
| title_full | The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates |
| title_fullStr | The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates |
| title_full_unstemmed | The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates |
| title_short | The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates |
| title_sort | influence of argon cluster ion bombardment on the characteristics of aln films on glass ceramics and si substrates |
| topic | aluminum nitride thin films gas cluster ion beam surface smoothing material characterization |
| url | https://www.mdpi.com/2079-4991/12/4/670 |
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