A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in the fabrication process to reduce the parasitic capacitance caused by the thick silicon nitride film. According to the S-paramet...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10015742/ |