Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble c...

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Bibliographic Details
Main Authors: Ke Liu, Chunjian Tan, Shizhen Li, Wucheng Yuan, Xu Liu, Guoqi Zhang, Paddy French, Huaiyu Ye, Shaogang Wang
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Electronics
Subjects:
superjunction
MOSFET
doping profile
reverse recovery
body diode
Online Access:https://www.mdpi.com/2079-9292/12/13/2977

Internet

https://www.mdpi.com/2079-9292/12/13/2977

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