Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction
Abstract The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-12-01
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| Series: | High Voltage |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/hve2.12149 |