Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction
Abstract The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-12-01
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| Series: | High Voltage |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/hve2.12149 |
| _version_ | 1797988660904198144 |
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| author | Meng Huang Haoran Wang Liangjun Bai Kang Li Ju Bai Xiaoming Zha |
| author_facet | Meng Huang Haoran Wang Liangjun Bai Kang Li Ju Bai Xiaoming Zha |
| author_sort | Meng Huang |
| collection | DOAJ |
| description | Abstract The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measurement and estimation of the device operation conditions. Recently, emerging techniques have been developed, not only for the detection and estimation but also for the prognostics of IGBTs with the condition data. In this paper, a review is performed on the recent progress in the CM techniques for IGBTs. First, some emerging electrical and thermal measurements are reviewed. Based on the sensed data, the health indicator estimation techniques are summarised. Moreover, for the emerging prognostics and health management applications, some remaining using lifetime (RUL) prediction methods are reviewed. Finally, the research gaps and directions are discussed for the CM in IGBT applications. |
| first_indexed | 2024-04-11T08:07:42Z |
| format | Article |
| id | doaj.art-0b036b2fa85744c282114e7d87a719fa |
| institution | Directory Open Access Journal |
| issn | 2397-7264 |
| language | English |
| last_indexed | 2024-04-11T08:07:42Z |
| publishDate | 2021-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj.art-0b036b2fa85744c282114e7d87a719fa2022-12-22T04:35:29ZengWileyHigh Voltage2397-72642021-12-016696797710.1049/hve2.12149Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and predictionMeng Huang0Haoran Wang1Liangjun Bai2Kang Li3Ju Bai4Xiaoming Zha5School of Electrical Engineering and Automation Wuhan University Wuhan ChinaEnergy Department Aalborg University Aalborg DenmarkSchool of Electrical Engineering and Automation Wuhan University Wuhan ChinaSchool of Electrical Engineering and Automation Wuhan University Wuhan ChinaSchool of Electrical Engineering and Automation Wuhan University Wuhan ChinaSchool of Electrical Engineering and Automation Wuhan University Wuhan ChinaAbstract The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measurement and estimation of the device operation conditions. Recently, emerging techniques have been developed, not only for the detection and estimation but also for the prognostics of IGBTs with the condition data. In this paper, a review is performed on the recent progress in the CM techniques for IGBTs. First, some emerging electrical and thermal measurements are reviewed. Based on the sensed data, the health indicator estimation techniques are summarised. Moreover, for the emerging prognostics and health management applications, some remaining using lifetime (RUL) prediction methods are reviewed. Finally, the research gaps and directions are discussed for the CM in IGBT applications.https://doi.org/10.1049/hve2.12149condition monitoringinsulated gate bipolar transistorspower electronicsremaining life assessment |
| spellingShingle | Meng Huang Haoran Wang Liangjun Bai Kang Li Ju Bai Xiaoming Zha Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction High Voltage condition monitoring insulated gate bipolar transistors power electronics remaining life assessment |
| title | Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction |
| title_full | Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction |
| title_fullStr | Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction |
| title_full_unstemmed | Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction |
| title_short | Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction |
| title_sort | overview of recent progress in condition monitoring for insulated gate bipolar transistor modules detection estimation and prediction |
| topic | condition monitoring insulated gate bipolar transistors power electronics remaining life assessment |
| url | https://doi.org/10.1049/hve2.12149 |
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