Effect of a ZrO<sub>2</sub> Seed Layer on an Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric material...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/5/1959 |