An experimental comparison of interface trap density in hafnium oxide-based FeFETs
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode materials and their deposition technology is an area...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-12-01
|
| Series: | Memories - Materials, Devices, Circuits and Systems |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000683 |