Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

In this study, Green MicroLEDs with different H<sub>2</sub> flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-p...

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Bibliographic Details
Main Authors: Hsin-Yu Liu, Donghao Zhang, Zhongying Zhang, Chaohsu Lai, Zongmin Lin, Chia-En Lee, Lijun Bao, Sheng-Po Chang, Shoou-Jinn Chang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
MicroLEDs
InGaN/GaN MQWs
V-pits
H<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$_2$</tex-math> </inline-formula> </named-content>
potential barrier
Online Access:https://ieeexplore.ieee.org/document/10494520/

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https://ieeexplore.ieee.org/document/10494520/

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