Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concen...

Full description

Bibliographic Details
Main Authors: Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Crystals
Subjects:
hafnium oxide
ferroelectric
pyroelectric
plasma enhanced atomic layer deposition
X-ray diffraction
Online Access:https://www.mdpi.com/2073-4352/12/8/1115

Internet

https://www.mdpi.com/2073-4352/12/8/1115

Similar Items