Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors

Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-embedded cooling (CE-cool) are compared. The...

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Príomhchruthaitheoirí: Yunqian Song, Chuan Chen, Qidong Wang, Jianyu Feng, Rong Fu, Xiaobin Zhang, Liqiang Cao
Formáid: Alt
Teanga:English
Foilsithe / Cruthaithe: MDPI AG 2023-12-01
Sraith:Micromachines
Ábhair:
Rochtain ar líne:https://www.mdpi.com/2072-666X/15/1/33