A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs
In this paper, an innovative vertical MOSFET based on through-oxide via (TOV) technology is proposed for silicon-on-insulator (SOI)-based monolithic 3-D ICs. The proposed vertical MOSFET is investigated numerically. It was found that SOI can effectively reduce the parasitic capacitance, leakage curr...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/18/2241 |