Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits

Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption. However, FeRAM (Ferroelectric Random Acce...

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Bibliographic Details
Main Authors: Donglin Zhang, Honghu Yang, Yue Cao, Zhongze Han, Yixuan Liu, Qiqiao Wu, Yongkang Han, Haijun Jiang, Jianguo Yang
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Micromachines
Subjects:
ferroelectric capacitor
hafnium
test methodology
small area
array
non-ideal effect
Online Access:https://www.mdpi.com/2072-666X/14/10/1851

Internet

https://www.mdpi.com/2072-666X/14/10/1851

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