Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode

Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode

AbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the conc...

Full description

Bibliographic Details
Main Authors: Jae‐Sik Sim, Kisoo Kim, Minje Song, Sungil Kim, Minhyup Song
Format: Article
Language:English
Published: Electronics and Telecommunications Research Institute (ETRI) 2021-10-01
Series:ETRI Journal
Subjects:
avalanche photodiodes
breakdown voltage
charge layer
ingaas/inalas
multiplication
rosa
Online Access:https://doi.org/10.4218/etrij.2020-0427

Internet

https://doi.org/10.4218/etrij.2020-0427

Similar Items