Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode

AbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the conc...

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Main Authors: Jae‐Sik Sim, Kisoo Kim, Minje Song, Sungil Kim, Minhyup Song
Format: Article
Language:English
Published: Electronics and Telecommunications Research Institute (ETRI) 2021-10-01
Series:ETRI Journal
Subjects:
Online Access:https://doi.org/10.4218/etrij.2020-0427
_version_ 1819102566384926720
author Jae‐Sik Sim
Kisoo Kim
Minje Song
Sungil Kim
Minhyup Song
author_facet Jae‐Sik Sim
Kisoo Kim
Minje Song
Sungil Kim
Minhyup Song
author_sort Jae‐Sik Sim
collection DOAJ
description AbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch‐through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3‐dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.
first_indexed 2024-12-22T01:36:36Z
format Article
id doaj.art-0c3dc35fd7f849b4a9b1dbcea9250191
institution Directory Open Access Journal
issn 1225-6463
language English
last_indexed 2024-12-22T01:36:36Z
publishDate 2021-10-01
publisher Electronics and Telecommunications Research Institute (ETRI)
record_format Article
series ETRI Journal
spelling doaj.art-0c3dc35fd7f849b4a9b1dbcea92501912022-12-21T18:43:21ZengElectronics and Telecommunications Research Institute (ETRI)ETRI Journal1225-64632021-10-0143591692210.4218/etrij.2020-042710.4218/etrij.2020-0427Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiodeJae‐Sik SimKisoo KimMinje SongSungil KimMinhyup SongAbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch‐through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3‐dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.https://doi.org/10.4218/etrij.2020-0427avalanche photodiodesbreakdown voltagecharge layeringaas/inalasmultiplicationrosa
spellingShingle Jae‐Sik Sim
Kisoo Kim
Minje Song
Sungil Kim
Minhyup Song
Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
ETRI Journal
avalanche photodiodes
breakdown voltage
charge layer
ingaas/inalas
multiplication
rosa
title Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
title_full Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
title_fullStr Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
title_full_unstemmed Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
title_short Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
title_sort optimization of charge and multiplication layers of 20 gbps ingaas inalas avalanche photodiode
topic avalanche photodiodes
breakdown voltage
charge layer
ingaas/inalas
multiplication
rosa
url https://doi.org/10.4218/etrij.2020-0427
work_keys_str_mv AT jaesiksim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode
AT kisookim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode
AT minjesong optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode
AT sungilkim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode
AT minhyupsong optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode