Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode
AbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the conc...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
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Electronics and Telecommunications Research Institute (ETRI)
2021-10-01
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Series: | ETRI Journal |
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Online Access: | https://doi.org/10.4218/etrij.2020-0427 |
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author | Jae‐Sik Sim Kisoo Kim Minje Song Sungil Kim Minhyup Song |
author_facet | Jae‐Sik Sim Kisoo Kim Minje Song Sungil Kim Minhyup Song |
author_sort | Jae‐Sik Sim |
collection | DOAJ |
description | AbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch‐through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3‐dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps. |
first_indexed | 2024-12-22T01:36:36Z |
format | Article |
id | doaj.art-0c3dc35fd7f849b4a9b1dbcea9250191 |
institution | Directory Open Access Journal |
issn | 1225-6463 |
language | English |
last_indexed | 2024-12-22T01:36:36Z |
publishDate | 2021-10-01 |
publisher | Electronics and Telecommunications Research Institute (ETRI) |
record_format | Article |
series | ETRI Journal |
spelling | doaj.art-0c3dc35fd7f849b4a9b1dbcea92501912022-12-21T18:43:21ZengElectronics and Telecommunications Research Institute (ETRI)ETRI Journal1225-64632021-10-0143591692210.4218/etrij.2020-042710.4218/etrij.2020-0427Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiodeJae‐Sik SimKisoo KimMinje SongSungil KimMinhyup SongAbstractWe calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch‐through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3‐dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.https://doi.org/10.4218/etrij.2020-0427avalanche photodiodesbreakdown voltagecharge layeringaas/inalasmultiplicationrosa |
spellingShingle | Jae‐Sik Sim Kisoo Kim Minje Song Sungil Kim Minhyup Song Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode ETRI Journal avalanche photodiodes breakdown voltage charge layer ingaas/inalas multiplication rosa |
title | Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode |
title_full | Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode |
title_fullStr | Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode |
title_full_unstemmed | Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode |
title_short | Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode |
title_sort | optimization of charge and multiplication layers of 20 gbps ingaas inalas avalanche photodiode |
topic | avalanche photodiodes breakdown voltage charge layer ingaas/inalas multiplication rosa |
url | https://doi.org/10.4218/etrij.2020-0427 |
work_keys_str_mv | AT jaesiksim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode AT kisookim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode AT minjesong optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode AT sungilkim optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode AT minhyupsong optimizationofchargeandmultiplicationlayersof20gbpsingaasinalasavalanchephotodiode |