P-Channel and N-Channel Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power CMOS
In this paper, n-channel and p-channel super-steep subthreshold slope (SS) PN-body tied (PNBT) silicon on insulator field-effect transistors (SOI-FETs) are demonstrated. The PNBT structure has a symmetrical source and drain structure. The devices show super-steep SS (< 1 mV/dec) character...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8493139/ |