Interface influence on the diffusion mechanisms during the hetero‐epitaxial growth of Aluminum on Ni(100) substrate by molecular dynamics

Interface influence on the diffusion mechanisms during the hetero‐epitaxial growth of Aluminum on Ni(100) substrate by molecular dynamics

We investigate the mechanism that occurs during aluminum thin film growth on Ni(100) substrate by molecular dynamics simulation and Embedded Atom Method interaction potential. The simulation is performed at 300K using an incident energy of 1eV. The growth of rectangular structure in first layer fa...

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Bibliographic Details
Main Authors: A. Hassani, H. El Azrak, F. Ediaai, M. Dardouri, K. Sbiaai, A. Hasnaoui, K. Iskafi, A. Tabyaoui, A. Makan
Format: Article
Language:English
Published: Faculté Polydisciplinaire de Khouribga 2017-08-01
Series:Journal of Applied Surfaces and Interfaces
Subjects:
Heteroepitaxial growth
Nickel
exchange mechanism
Diffusion mechanism
interface
molecular dynamic simulation
Online Access:https://revues.imist.ma/index.php?journal=jasi&page=article&op=view&path%5B%5D=8713&path%5B%5D=5499

Internet

https://revues.imist.ma/index.php?journal=jasi&page=article&op=view&path%5B%5D=8713&path%5B%5D=5499

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