| Summary: | We investigate the mechanism that occurs during aluminum thin film growth on Ni(100) substrate by molecular
dynamics simulation and Embedded Atom Method interaction potential. The simulation is performed at 300K using an
incident energy of 1eV. The growth of rectangular structure in first layer favoured flattening mechanism for the impact of
deposited atoms, and influences the same structure at the beginning of the second and third layers growth by allowing
several exchange mechanisms in order to have 2D growth. Beyond fourth layer, rectangular structure becomes absent at
the expense on triangular structure formation, favouring the mechanism of simple jumps in presence of high energy barrier
of interlayer and disadvantages exchange mechanism, to transform the growth mode into island mode.
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